The symposia Advances in Electroceramics and Microwave fabrics and Their Applications have been held in the course of the eighth Pacific Rim convention on Ceramic and Glass know-how (PACRIM eight) from could 31-June five, 2009 in Vancouver, Canada. This factor includes 17 peer-reviewed papers (invited and contributed) from those symposia. The booklet is logically equipped and thoroughly chosen articles supply perception into multifunctional fabrics and platforms and incorporates the most recent advancements on the topic of multifunctional fabrics and structures together with electroceramics and microwave materials.Content:
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Traditional material New material E / kV/mm 0 20 40 Electric field / kV/mm(pk-pk) Fig 2 D-E hysteresis curves and the distortions in the electric field. 3 Frequency dependence of sound pressure. 2 MLCC with large capasitance These days, MLCs with 1 μηι dielectric layer in thickness have already appeared on the world market. The market for large capacitance capacitors, more than 10 μΈ, is recently expanding and replacing that for Ta and Al electrolytic capacitors. MLCs with large capacitance commonly consist of BaTiC>3 based ferroelectric material for dielectrics and Ni metal for inner electrodes, so MLCs have to be fired in a reducing atmosphere to prevent Ni electrodes from the oxidation.
Kang, K. H. Lee, H. J. Cho, H. Hideki, W. D. Kim, S. I. Lee, and M. Y. Lee, J. Appl. , 85,287 (1999). 11 J. F. Scott, Integr. , 9,1 (1995). 9 12 N. Horiuchi, T. Matsuo, T. Hoshina, H. Kakemoto and T. Tsurumi, Appl. Phys. , 94, 102904 (200'9). S. M. Sze, Physics of Semiconductor Device, 2nd ed. (wiley, New York, 1981). , Ltd. 10-1, Higashikotari, 1-chôme, Nagaokakyo-shi, Kyoto 617-8555 Japan Abstract Recent advances in multilayer ceramic devices using in electronic circuits are presented. The multilayer devices are including MLCC, LTCC and PTC thermistors.
2 Figure 6. XRD peak angles for (100) plane of M0SÍ2 for MoSiX thin film. (b) TOPO image Figure 7. 2 thin film on quartz substrate. 2 Figure 8. Resistivity of MoSiX thin film. Λ». /.... 2 0 Ξ=Ξ••••:^C J.. 0 100 200 300 Heating temperature [°C] Figure 9. Resistance-heating temperature characteristic of each MoSiX thin-Film heater. 85 1 0 < 1 , 1 , 1 , 100 200 300 Heating temperature [°C] Figure 10. Normalized resistance-heating temperature characteristics of each MoSiX thin-film heater. in the BSE image is not caused by a difference in the composition but by the unevenness of the thin film.
Advances in Multifunctional Materials and Systems